By M. R. Pinto, W. M. Coughran Jr., C. S. Rafferty, R. K. Smith, E. Sangiorgi (auth.), K. Hess, J. P. Leburton, U. Ravaioli (eds.)

Large computational assets are of ever expanding value for the simulation of semiconductor procedures, units and built-in circuits. The Workshop on Computational Electronics used to be meant to be a discussion board for the dis cussion of the state of the art of equipment simulation. 3 significant examine components have been lined: traditional simulations, in keeping with the drift-diffusion and the hydrodynamic types; Monte Carlo tools and different suggestions for the answer of the Boltzmann shipping equation; and computational methods to quantum delivery that are proper to novel units in keeping with quantum interference and resonant tunneling phenomena. Our objective used to be to collect researchers from quite a few disciplines that give a contribution to the development of gadget simulation. those contain computing device Sci ence, electric Engineering, utilized Physics and utilized arithmetic. The suc cess of this multidisciplinary formulation used to be confirmed via various interactions which happened on the Workshop and through the next three-day brief path on Computational Electronics. The layout of the direction, together with a few educational lectures, and the big attendance of graduate scholars, prompted many discussions and has confirmed to us once again the significance of cross-fertilization among different disciplines.

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**Additional resources for Computational Electronics: Semiconductor Transport and Device Simulation**

**Example text**

Figure 1(80) shows the velocity curves generated by different methods on Si. The MC and HD results are from [11] on the same test devices. We can see that the velocity curve of the augmented DD simulation compare very well with that of the MC simulation. Fig. l(b) shows the electric fields by the DD model and the augmented DD model at different biases. With the field gradient term, the field is modulated through the self-consistency. We also include a preliminary GaAs result in Fig. 2. The MC results are from our own group and compare well with the augmented DD model.

Above are usual finite element convergence conditions for single equations. 3. The difference between the mappings U~) and U(i) is found by taking all u(j) except u(i) equal, and solving for u(i) or u~). Thus, for each component mapping U~) where qi is the order of convergence for the finite element discretization of equation fi( u(1), ... , u(k)) = O. The propagation of discretization errors through some of the equations fi( u(1), ... 3. that LU*
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On the other hand, a full multi-dimensional HD model[2] is too complex both for computation speed and for model modification. In fact, simplified HD models, such as the temperature model, have been widely used by many authors. Hence, if the DD model can be modified to accurately describe the velocity overshoot effect in submicron devices, it will be of much value in a practical sense owing to its simplicity. Thornber[l] has suggested a one dimensional augmented DD current equation for modeling velocity overshoot effects.