Dislocations in Solids, Vol. 12 by F.R.N. Nabarro, J.P. Hirth (Eds.)

By F.R.N. Nabarro, J.P. Hirth (Eds.)

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At the low temperature end, the yield deviates from the mid-temperature behaviour but in a different sense; both the activation energy Q and the yield stress become lower than what eq. (11) would predict. This low temperature behaviour is observed in almost all diamond-cubic semiconductors, as shown in Fig. 16(b). The aforementioned change of the dislocation core structure from dissociated glide to perfect shuffle core is likely to be related to this macroscopic transition. In the following we discuss the current understanding of dislocation core structure and the mechanisms of its motion.

B) Stress dependence of velocity of screw (•) and 60◦ (◦) dislocations in intrinsic Si at temperatures (1) T = 800, (2) 710, (3) 650◦ C [95]. 2 [102]. However, the actual value of m appears to depend not only on the type of dislocations, but also on the orientation of Burgers vector with respect to the compression axis. This observation suggests a breakdown of the Schmid’s law in silicon at high stresses. We would argue that Schmid’s law is also violated at low stresses, as shown by the large scatter in the velocity data measured at the same resolved shear (Schmid) stress.

64 dislocation mobility to be highly sensitive to the nature of impurities, their concentration and mobilities. A variety of interaction mechanisms have been discussed in the context of Cottrell, Suzuki and Snoeck atmospheres [5] (p. 639). Although generic aspects of interaction between substitutional impurities and dislocations are well understood, computational capabilities for predictive modelling are still lacking. The problem of dislocation–point defect interaction is complex. The simplest case is probably the interaction with a substitutional atom at a large distance away from the dislocation.

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